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We describe the use of high resolution X-ray diffraction (HRXRD) for inline metrology of strain relaxed buffer (SRB) layers and epitaxial layers grown thereon. The use of SRBs as a virtual substrate is a promising candidate for advanced CMOS logic at the 7 nm technology node and presents some unique challenges to traditional HRXRD measurements. To overcome these challenges, reciprocal space maps (RSMs)...
Lattice matched and current matched GaAsP/SiGe tandem solar cell on Si has the potential of 40% efficiency. This paper describes our design, fabrication and improvement of this tandem solar cell. This tandem device has achieved efficiencies of 20.6% and 20.2% under 1X and 2.2X, respectively. Current matching between top cell and bottom cell is realized by manipulating the bottom cell active area and...
SiGe/Si quantum-well nanomembranes, where stress due to lattice mismatch is relaxed via elastic strain sharing rather than defect formation, are developed and their potential for far-infrared intersubband device applications is demonstrated.
The strain engineering of silicon-germanium alloys plays a pivotal role in advanced Group IV opto- and nanoelectronics. Strain induced in Si, Ge, and Si1-yGey via epitaxial growth on relaxed Si1-xGex, has enabled enhanced electronic transport and created charge confinement in heterostructures. A current application of strained-Si/relaxed-SiGe heterostructures, Si-Ge based quantum information processing,...
Ultrathin (11 nm) strained SiGe-on-insulator (SGOI) with a Ge fraction of 0.5 was fabricated by Ge condensation technique. The residual compressive strain as high as 1.72% was achieved in SGOI layer by reducing the initial thickness of as-grown Si0.93Ge0.07 layer. Strained-SGOI pMOSFET exhibits a hole mobility of 3 times higher than that of Si-on-insulator pMOSFET.
Progress in creating thin film relaxed lattice constant semiconductors on conventional substrates has recently led to progress in a variety of electronic and optoelectronic devices. By understanding the relationship between misfit and threading dislocations, and the relationship between dislocation nucleation and threading dislocation propagation, graded composition buffer layers can be used to relieve...
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