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Classical constant field scaling has reached a point of diminishing returns as a result of fundamental limitations, increased process complexity and lithographic challenges. Si-based passive interposers offer the possibility of integrating heterogeneous technologies on a silicon substrate as well as the possibility synthesizing very large chips with silicon like latencies. 3D die stacking allows for...
This letter proposes an RF model of through-silicon via (TSV) considering both skin-depth and lossy substrate effects up to 20 GHz. The TSV is fabricated in 0.18-μm SiGe BiCMOS process with the dimensions of 50 μm in diameter and 100 μm in depth. The equivalent circuit model is extracted from the measured results and physical structure of a single TSV. The frequency-dependent characteristics of TSV...
As operating frequencies increase in state-of-the-art wireless designs, highly accurate modelling of critical interconnect paths routed over silicon is crucial for first-pass design success [1]. With this in mind, the interconnect stack of an IBM silicon germanium (SiGe) process incorporating a TSV ground supply network was modelled with model accuracy and efficiency as the goals. A unique modelling...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
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