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We have achieved the first monolithically integrated triple-junction InGaP/GaAsP/SiGe solar cell on Si substrate, achieving an adjusted efficiency of 20% AM0 1-sun. The practical achievable maximum AM0 efficiency for the optimal cell near this lattice constant is 39%. The combination of this high efficiency with the ability to process such cells on larger area lower-cost silicon substrates motivates...
Lattice matched and current matched GaAsP/SiGe tandem solar cell on Si has the potential of 40% efficiency. This paper describes our design, fabrication and improvement of this tandem solar cell. This tandem device has achieved efficiencies of 20.6% and 20.2% under 1X and 2.2X, respectively. Current matching between top cell and bottom cell is realized by manipulating the bottom cell active area and...
Nowadays the search for an efficient silicon based light emitting source attracts a lot of attention, because the niche of the light emitter device for chip to chip communications is not yet occupied [1]. Low quantum efficiency of radiative recombination in the bulk Si caused by an indirect nature of its band gap is the challenge to be bypassed. Up to the date the hybrid III–V on Si technology dominates,...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
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