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For the nondestructive characterization of SiC wafers for power device application, birefringence imaging is one of the promising methods. In the present study, it is demonstrated that birefringence image contrast variation in off‐axis SiC wafers corresponds to the in‐plane shear stress under conditions slightly deviating from crossed Nicols according to both theoretical consideration and experimental...
Classical molecular dynamics simulations are used to investigate the 3D evolution of stacking faults (SFs), including the partial dislocation (PD) loops enclosing them, during growth of 3C‐SiC layers on Si(001). It is shown that the evolution of single PD loops releasing tensile strain during the initial carbonization stage, commonly preceding 3C‐SiC deposition, leads to the formation of experimentally...
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