The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
TSV CMP processes on bonded wafers include TSV backside CMP revealing process and TSV Via last CMP process. The patterned and thinned device wafers are temporarily bonded on silicon carrier, which results in huge TTV (total thickness variation). Such TTV makes CMP processes more challenging. In this paper, CMP processes on bonded wafers are studied. Cu and barrier layer are successfully and fully...
Chemical Mechanical Polishing (CMP) on thinned bonded wafer is one of the key challenges in the entire via-last TSV process flow. This paper addresses the issue of oxide loss and barrier metal residue during CMP process. The impact of pre-CMP thermal budget on (i) CMP polishing rate, (ii) uniformity and (iii) selectivity to the underlying dielectric on bonded wafers is investigated. We further looked...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.