The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The novel use of SiCN underneath TEOS oxide as a bonding surface in the wafer bonding of Backside-illuminated (BSI) sensor is proposed and the mechanism of void control by SiCN is clarified. In general, high-temperature processing results in generating voids between the wafer interfaces after bonding due to the release of high-pressure H2O contained in TEOS. In the proposed mechanism, the SiCN exposed...
We are reporting comprehensive efforts for development and characterization of thin film PECVD a:SiH and TCO materials, and novel surface modification techniques to enhance solar cell performance. All process development and cell fabrication was conducted on 200 mm substrate wafers on CMOS manufacturing platform tools. Entire process parameter space of our PECVD tool was explored to enable increased...
Low-temperature aluminum-germanium (Al-Ge) eutectic bonding has been investigated for monolithic three-dimensional integrated circuits (3DIC) applications. Successful bonds using Al-Ge bilayer films as thin as 157 nm were achieved at temperatures as low as 435degC, when applying 200 kPa down-pressure for 30 minutes. The liquid phase of the eutectic composition ensured a seamless and void-free bond...
The advantages of the SiOCH low-k films with hydrocarbon cross-links (hydrocarbon bridges) Si-Cn-Si have been reported recently. However, hydrocarbon cross-links are not produced so selectively by the PECVD method, since the hydrocarbon components tend to form terminal atom groups such as Si-CH3. For producing hydrocarbon cross-links effectively by the PECVD method, the polymerization reactions of...
In order to control the characteristics of porogen-based porous SiOC film (k < 2.5), we investigated its dependence on the wavelengths of ultraviolet (UV) light by using methods of FT-IR, TDS and nano-indentation. As a result, it was found that specific wavelengths of UV light strongly was effective to porous SiOC film production : porogen desorption, mechanical strength improvement, and reduction...
This work studies the microscopic defects in oxynitride films prepared by plasma-enhanced chemical vapor deposition (PECVD) technique. X-ray photoelectron spectroscopy (XPS) study indicates that the silicon atoms in the films are randomly bonded with nitrogen and oxygen atoms. Photoluminescence measurements were conducted to study the radiative defect centers in the oxynitride films and found that...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.