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Localized metal bonding is one of the main drivers for 3D technology implementation as it allows high vertical interconnection densities between piled up dies. In this paper we will present the direct bonding of tungsten blanket. The copper and tungsten direct bonding will be compared in terms of bonding mechanism and temperature dependence.
This paper presents the implementation of a key technology developed for high density 3-D integration by circuit stacking. Direct copper bonding at room temperature, atmospheric pressure and ambient air of copper pads allowed the elaboration of a 10times10 mum vertical interconnect with a contact resistance of 10 mohms. First tests on tungsten bonding will be also reviewed.
A 300-mm wafer-level three-dimensional integration (3DI) process using tungsten (W) through-silicon vias (TSVs) and hybrid Cu/adhesive wafer bonding is demonstrated. The W TSVs have fine pitch (5 mum), small critical dimension (1.5 mum), and high aspect ratio (17:1). A hybrid Cu/adhesive bonding approach, also called transfer-join (TJ) method, is used to interconnect the TSVs to a Cu BEOL in a bottom...
In accordance with continuing push for smaller and faster electronics, there is strong demand for further miniaturization and higher performance of mobile and other digital devices. Three-dimensional interconnect with through silicon via is the most potential solution to extend Moore's Law. In recent years, 3D interconnect(3DIC) technology is attracting the interest of university, research institutes,...
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