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Direct Cu-Cu bonding has been pursued by the semiconductor industry as the next interconnection node, for its superior power-handling capability, thermal stability and reliability as compared to traditional solders. However, manufacturability of Cu interconnections has so far been severely limited by the relatively high modulus of Cu, requiring costly planarization processes to address non-coplanarities...
Cu-Cu thermocompression bonding has become an important technology for 3D packaging and integration. In this paper, a novel low temperature thermocompression bonding technology using nanostructure Cu layer was presented. By selective dealloying of Cu-Zn alloy in dilute hydrochloric acid, porous nanostructure Cu layer was fabricated on silicon substrate. Scanning electron microscopy (SEM) and X-ray...
Aluminum has been widely used in integrated circuit (IC) chip interconnect As the IC feature sizes continue to shrink, the RC delay of the interconnect wire has become the main delay of the system, instead of the intrinsic gate delay. For the higher speed responsibility, the resistance of the interconnects should be reduced. Copper interconnect has become the only one option for the semiconductor...
Self assembled monolayer (SAM) of alkane-thiol of 6-carbon (1-hexanethiol, C6) chain length is applied on Cu surface (deposited on Si substrate) and examined carefully. Firstly, the ability of SAM adsorption onto Cu surface is confirmed by the sharp rise of water contact angle (CA) on the surface. Next, the thermal stability of SAM when it is stored in different environments is studied. The CA decreases...
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