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Three-dimensional (3D) integration technologies including a new 3D heterogeneous integration of super-chip are described. In addition, reliability issues in these 3D LSIs such as mechanical stresses induced by through-silicon vias (TSVs) and metal microbumps and Cu contamination in thinned wafers are discussed. Cu TSVs with the diameter of 20μm induced the maximum compressive stress of ~1 GPa at the...
For the demands of multifunction, high density interconnection, high performance and integration of homogeneous or heterogeneous ICs, three dimensional IC (3DIC) packaging technologies by through silicon via (TSV) and microbump were widely studied recently. Intending to learn the reliability performance of Pb-free microjoints, 4 chips were interconnected with one Si interposer by Sn2.5Ag microbumps,...
Recently the requirement for portable products, such as mobile phones, digital cameras, PDAs and game consoles, has been increasing rapidly and consumers want to easy to carry them and have multi-functions as well as lower price. So it's necessary to develop the semiconductor packages with thin and small size, high performance and low cost. And various types of SiP (system in package) technologies...
This paper presents preliminary results of a copper-based direct bond interconnect (DBIreg) 3D integration process that has been developed to leverage foundry standard copper dual damascene and Ziptronix bond technology to achieve scalable, very low Cost-of-Ownership, 3D interconnects with minimum foundry adoption barrier. Results achieved include 100% operable arrays of 72,500 3D copper DBIreg interconnections...
A reliability evaluation of a 300-mm-compatible 3DI process is presented. The structure has tungsten through-Si-vias (TSVs), a hybrid Cu/adhesive bonding interface, and a post Si-thinning Cu BEOL. The interface bonding strength, deep thermal cycles test, temperature and humidity test, and ambient permeation oxidation all show favorable results, indicating the suitability of this technology for VLSI...
3D integration technologies using through-Si via (TSV) technologies are receiving increased interest. A wide diversity of technologies is being proposed and an increasing number of potential application areas are identified. Different application domains have different TSV requirements and justify different integration approaches. The most important challenges to a widespread use of 3D integration...
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