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The multi-stack process on wafer-on-wafer (WOW) has been developed. In order to realize the multi-stacked wafer with ultra thinned wafer of less than 10 μm with adhesive polymer, several processes have been optimized. The wafer thickness after back-grinding was controlled within the total thickness variation (TTV) of 1.2 μm on wafer-level of 8 inch. For the side wall of though silicon vias (TSV),...
Demand for Through Silicon Via (TSV) is being driven by the need for 3D stacking to shorten interconnection length, increase signal speed, reduce power consumption and reduce power dissipation. Increasing demand for new and more advanced electronic products with a smaller form factor, superior functionality and performance with a lower overall cost has driven the semiconductor industry to develop...
This paper reports a hermetic MEMS package structure with silicon wafer as bonded cap at wafer-level scale. CMP followed by spraying chemical smoothing process is utilized to thin the N(100) silicon cap wafer to the thickness of 150 mum after wafer-level Cu/Sn isothermal solidification bonding. Method for the thinning process and parameters for Cu/Sn isothermal solidification bonding process are researched...
A hybrid multilayer interconnect process and high-throughput die-to-wafer bonding technology were developed and introduced into the SMAFTI (SMArt chip connection with FeedThrough Interposer) package. The fine circuit layer FeedThrough Interposer (FTI) was fabricated between memory and logic dice and offers superior power/signal integrity, allowing over a thousand 3-D inter-chip connections through...
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