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The paper demonstrates a low-cost flexible wireless microsystem fabrication technology combining the previously developed bumpless RFSOP scheme with a special surface cleaning process to assemble a CMOS chip with an organic substrate (SU-8/PDMS) by Au-Au thermocompressive bonds (<;200°C). About -15dB return loss and -0.8dB insertion loss @ 40GHz interconnecting structure and above 6MPa bonding...
This paper will focus on recent results of Cu-Cu non-thermo compression bonding for wafer-to-wafer 3D stacking. We report on bonding quality, wafer-to-wafer alignment accuracy and electrical connectivity. Specific pre-bonding surface conditioning is necessary to insure high bonding quality of patterned Cu wafers. A particular concern is related to the planarization (e.g. CMP) of Cu-SiO2 hybrid surfaces:...
The surfaces of optoelectronic materials such as silicon, GaAs, nitrides and oxides are known to be very difficult to bond with low melting point solders (<;300°C). Small portion of active elements (3.1~4.1wt% Ti and 0.2% Ce) added into conventional SnAg solder could improve its solderability with inorganic material surfaces. In this work, some bonding experiments using active solder containing...
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