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An analysis is developed for long secondary photocurrent transients in a-Si:H which gives the distribution of trapped holes in valence band tail states. Thermally assisted tunneling to dangling bonds is implicated as the rate-limiting step in hole recombination. Light soaking causes the energetically deeper hole traps with the longer residence times to be lost first and in the same number as would...
A self-consistent numerical model incorporating exponential tail states and Gaussian-distributed dangling bond states and doping states within the mobility gap is proposed to explain the results of experimental measurements of the dark conductivity, photoconductivity, and performance characteristics of thin-film Si:H solar cells. A one-to-one relationship between fourfold coordinated doping atoms...
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