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In this paper, 10μm Ag flip-chip interconnect joints by solid-state bonding was demonstrated between Si chips and Cu substrates. In experiments, an array of 125×125 Ag columns that had 10μm in diameter, 20μm in pitch and 10μm in height was fabricated in one chip region of Si wafers that were first metalized with Cr/Au. The process was performed using solid-state atomic bonding at 250°C with a static...
Direct bonding between large silicon (Si) chips and copper (Cu) substrates using pure silver (Ag) as bonding material has been successfully developed. The Si-Ag-Cu direct bonding process was performed in two assembly structures, die attachment and flip-chip interconnect, at low process temperature of 250degC. It is a typical reflow temperature of lead-free (Pb-free) solders. In die attachment structure,...
Electroless Ni-P plating is cost effective process to fabricate UBM for solder flip chip. Thickness of electroless Ni-P UBM is important factor for mechanical and electromigration reliability. Pb-free solder flip chips with different UBM thicknesses of 3, 5 and 10 mum were prepared. First, the effect of UBM thickness on mechanical reliability was investigated. Before underfilling, flip chips using...
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