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This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel. The...
This paper presents simulations on tunnel field-effect transistors (TFET) and comparisons carefully to assess their impact at the same supply voltage. Current-voltage characteristics are simulated for n and p TFETs with different channel materials:Si,Ge,InGaAs, and InAs. Results show that InAs has the highest current for its smallest bandgap and effective mass, but it can not meet the off-state leakage...
The direct epitaxial growth of ultrahigh-mobility InGaAs/InAlAs quantum-well (QW) device layers onto silicon substrates using metamorphic buffer layers is demonstrated for the first time. In this letter, 80 nm physical gate length depletion-mode InGaAs QW transistors with saturated transconductance gm of 930 muS / mum and fT of 260 GHz at VDS = 0.5 V are achieved on 3.2 mum thick buffers. We expect...
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