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We investigate nano-eptiaxial lateral overgrowth (NELOG) of InP from the nano-sized openings on a seed layer on the silicon wafer, by Hydride Vapor Phase Epitaxy (HVPE). The grown layers were analyzed by cathodoluminescence (CL) in situ a scanning electron microscope (SEM) and transmission electron microscopy (TEM). The results from InP:S growth shows that the boundary plane of the grown layer has...
Method of formation of regular PAA without a barrier layer in the process of anodizing of Al-film on n-type Si has been developed. Semiconductor InGaN-structures were selectively grown in modified PAA-template by MO VPE. Formed self-organized nanostructures InGaN have nonpolar crystallographic α-orientation. Investigations of luminescent properties and analysis of the spectral characteristics have...
To address the challenges of solid-state white lighting we have developed two designated metal-organic vapor phase epitaxy (MOVPE) mass production systems, the CRIUSreg close-coupled showerhead (CCS) and AIX 2800G4 HT Planetary Reactorreg tools with capacities of 30times2 inch and 42times2 inch, respectively. Uniformity over all wafers in a run of layers emitting in the blue spectral range was below...
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