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Memory structures based on InAs nanocrystals directly grown by molecular beam epitaxy (MBE) on SiO2 have been studied. The nanocrystals have a typical diameter of 5 nm and the density is about 2 times 1011 cm-2. High resolution TEM measurements have shown high crystalline quality and low size dispersion. Using these 7 nm-quantum dots, a test structure with a 3.5 nm-thick SiO2 tunnel oxide and a 10...
In this article, a fiber with a nano-semiconductor layer locating between the Si-core and Si-cladding is fabricated. The improving technique called MCVD which is one of the important preparations of optical fiber is adopted. InP is chosen as the semiconductor and a fiber with a nano-layer is received, the thickness of which is only 10 nm. On the basis of this structure of the fiber, it is call as...
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