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Memory structures based on InAs nanocrystals directly grown by molecular beam epitaxy (MBE) on SiO2 have been studied. The nanocrystals have a typical diameter of 5 nm and the density is about 2 times 1011 cm-2. High resolution TEM measurements have shown high crystalline quality and low size dispersion. Using these 7 nm-quantum dots, a test structure with a 3.5 nm-thick SiO2 tunnel oxide and a 10...
We report on the third-order optical nonlinearity of the e1 -e2 intersubband transition in GaN-AlN quantum wells and the s-pz intraband transition in GaN-AlN quantum dots, both of them in the spectral region around 1.5 mum. The results in terms of third-order susceptibility, together with the ultrafast nature of the nonlinear response, render these GaN-AlN nanostructures particularly suitable for...
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