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We investigate nano-eptiaxial lateral overgrowth (NELOG) of InP from the nano-sized openings on a seed layer on the silicon wafer, by Hydride Vapor Phase Epitaxy (HVPE). The grown layers were analyzed by cathodoluminescence (CL) in situ a scanning electron microscope (SEM) and transmission electron microscopy (TEM). The results from InP:S growth shows that the boundary plane of the grown layer has...
Indium phosphide nanostructures grown on hydrogenated silicon films are studied. The hydrogenated silicon films were deposited on various metallic and dielectric substrate surfaces, then indium phosphide nanostructures were grown on the hydrogenated silicon films. The hydrogenated silicon films and the indium phosphide nanostructures were examined to assess their structural, chemical and optical properties.
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