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During the last few years, graphene has gained remarkable attention in the device community. Graphene transistors are evolving at a rapid pace and graphene-based devices are considered as an option for a post-Si electronics. To assess whether graphene can meet the high expectations or not, the properties and specifics of this new material have to be analyzed carefully. The present paper provides an...
The introduction of deep n-well protection for bulk MOS transistors can highly enhance their DC and RF performance. It also gives the advantage of having floating-body and body-tied structures in bulk MOSFETs while eliminating the disadvantages related to the shift in performance between these two structures. We demonstrate that the high temperature, DC and RF performance of n-well isolated bulk MOSFETs...
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