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Measurement of small-signal equivalent circuit parameters was carried out to estimate the RF performance of conventional inversion channel and depletion channel SOS MOSFET's. It was shown that the latter has significantly higher cutoff frequency fT attributed to electron mobility of the depletion channel.
It has been eight years since the first electrical characterization of graphene, a material consisting of a single layer of sp2-bonded carbon atoms arranged in a honeycomb lattice [1]. Thought to be an impossible goal for many decades, its successful isolation in 2004 not only led to intensive research by physicists and chemists but also inspired renewed interest in carbon-based electronics from device...
The introduction of deep n-well protection for bulk MOS transistors can highly enhance their DC and RF performance. It also gives the advantage of having floating-body and body-tied structures in bulk MOSFETs while eliminating the disadvantages related to the shift in performance between these two structures. We demonstrate that the high temperature, DC and RF performance of n-well isolated bulk MOSFETs...
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