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Graphene is a relatively new material with unique properties that holds promise for electronic applications. Since 2004, when the first graphene samples were intentionally fabricated, the worldwide research activities on graphene have literally exploded. Apart from physicists, also device engineers became interested in the new material and soon the prospects of graphene in electronics have been considered...
During the last five years, the new material graphene has gained increasing attention in the device community. The progress in the development of graphene transistors is breathtaking and graphene-based devices are now considered as an option for a post-Si electronics. However, to realistically assess the potential of graphene, the existing problems with graphene and the options to solve them have...
A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/V ?? s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds...
We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10-13 /cm2 at room temperature and had mobility of ~ 1500...
Further scaling of silicon MOSFET feature size is projected to provide diminishing performance enhancements resulting in an increasing performance gap beyond the 45 nm node of the International Technology Roadmap for Semiconductors (ITRS). To close this gap, the industry is contemplating a paradigm shift to channel materials with carrier mobility substantially higher than offered by silicon. MOSFETs...
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