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Transconductance gm is an important parameter for small-signal analysis of analog circuits. It is paramount to analyse the gm and transconductance efficiency (gm/ID) as it provide useful design guidlines. The sensitivity of gm and (gm/ID) on process related parameters gives deeper insight of circuit performance. Amongst compact MOSFET models, EKV is known for its suitability in low power analog design...
In this paper, we present a FinFET compact model and its associated parameter extraction methodology. This explicit model accounts for all major small geometry effects and allows accurate simulations of both n- and p-type FinFETs. The model core is physics-based (long-channel model) and some semiempirical corrections are introduced in order to accurately simulate the behavior of ultrashort (L = 25...
A simple test structure is proposed for accurately extracting the substrate network parameters of a radio-frequency MOSFET with deep n-well implantation from two-port measurements. The test structure with the source, drain, and gate terminals all connected together is used as port one, while the bulk terminal as port two, making the substrate network distinctly accessible in measurements. A methodology...
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