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In the present article, we report a breakthrough approach for the rapid growth of whole void-free and highly preferred orientation Cu6Sn5 IMC interconnects of 50 µm thick by the current driven bonding (CDB) interconnect method and the use of a single crystal seeding substrate. There was no grain boundaries within the Cu6Sn5 IMC interconnect and no voids at both interfaces, which is beneficial for...
In this paper, a novel crystal component package based on silicon TSV interposer substrate is demonstrated by using 3D integration technologies. It is distinct from conventional crystal component using ceramic-based substrate. This crystal component with advanced silicon-based substrate shows great manufacturability to replace traditional fabrication approach. In addition, the SU-8 sealing bonding...
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