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Hybrid integration of III-V compound semiconductors onto silicon-on-insulator (SOI) substrate is discussed from material, device and application perspective. Recent progress in integration technology and device optimization is reviewed.
InP-based photonic devices on SOI substrate using bonding technologies were demonstrated. Direct bonding and BCB bonding enable us to realize high optical confinement DFB lasers and other devices for intra/inter-chip connection in Si LSI circuit. Low threshold optical pumped membrane lasers and CW-operation of lateral current injection lasers with thin lateral cladding lasers were realized.
An injection-type distributed-feedback laser, with wirelike active regions, directly bonded on a silicon-on-insulator substrate, was realized. A low threshold current Ith of 104 mA was obtained at a stripe width of 25 mum and a cavity length of 1 mm. A sidemode suppression ratio of 28 dB was obtained at 1.3 Ith.
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