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The possibility of the surface-activated bonding (SAB) technologies for fabricating III-V-on-Si hybrid tandem solar cells is discussed. Although the electrical conduction across the bonding interfaces is influenced by the interface states introduced during the surface-activation process, their impacts are likely to be lowered by combining more heavily-doped bonding layers and the annealing process...
We investigated the electrical properties of highly-doped n-Si/n-Si and p-Si/p-Si junctions fabricated by using the surface activated bonding. Heights of potential barrier formed at the respective bonding interface were estimated by measuring dependence of their current-voltage characteristics on the ambient temperature. The heights of barrier were found to be varied due to annealing often the bonding...
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