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The homoepitaxial growth of diamond on single crystal substrates is done using microwave plasma-assisted chemical vapor deposition with a hydrogen-methane plasma. The doping of the deposited diamond with boron makes it a p-type semiconductor and with phosphorus makes it an n-type semiconductor. The doping of diamond is done to make diamond electronic devices. Diamond is of interest for electronics...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
Magnetic thin films of FeTa-N-O were prepared by using facing-target type dc magnetron sputtering in Ar+N2+O2 plasma. The magnetic and structural properties were investigated as a function of the flow rates of the O2 and N2 introduced into the argon atmosphere. A high Bs (19 kG) and soft magnetic properties (Hc??0.3 Oe, ????3000) were obtained for a wide range of O2 and N2 flow rates, and were retained...
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