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This paper presents a CMOS-compatible RF MEMS technology to build low actuation voltage switches. SiC increases the stiffness of the switches to improve reliability and durability. A design methodology is introduced to optimize tradeoffs between important system criteria, i.e., voltage levels, signal performance and switching speed. Simulations are used to evaluate devices designed with the technology.
The research activities on RF-MEMS devices at IMETU (Institute of Microelectronics of Tsinghua University) are presented in this paper. The RF MEMS devices investigated include micro-machined inductors, switches, voltage controlled capacitors. The recent research focus is RF-MEMS switches. Two recently developed DC-contact switches are demonstrated, one is with series configuration and another is...
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