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Robustness and reliability of an embedded RF-MEMS switch are analyzed. Changes of key switch parameters, such as COFF, CON, and pull-in voltage, with the ambient temperature are investigated in the range of -30°C to 150°C. The biggest temperature effect, a decrease by a factor of 2 between -30°C and 150°C, is observed for COFF, while CON weakly increases...
A robust design of RF MEMS capacitive shunt switches was implemented with a movable gold membrane, separate and non-contacting actuation pads, and electrostatic actuation. The same design was fabricated on silicon and quartz substrates with different combinations of dielectric constant, resistivity, thermal conductivity, and thermal expansion coefficient. It was found that most switches could operate...
An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of 0.25 ??m BiCMOS process, has been characterized. First, a mechanical model based on Finite-Element-Method (FEM) was developed by taking the residual stress of the thin film membrane into account. The pull-in voltage and the capacitance values obtained with the mechanical model agree very well with the measured values...
The validity and applicability of a high-level simulation approach of radio-frequency microelectromechanical-system (RF-MEMS) devices, based on a library of analytical compact models of elementary MEMS components, are investigated through an extensive comparison between simulation results and measurements of some representative devices (variable capacitors and series ohmic switches). The in-house...
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