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This work presents a novel failure analysis technique for the dielectric charging phenomenon in electrostatically driven MEMS devices. The new reliability assessment methodology makes use of Kelvin Probe Force Microscopy (KPFM) and it targets in this specific work thin PECVD silicon nitride films for electrostatic capacitive RF MEMS switches. The proposed technique took advantage of the AFM tip to...
This paper deals with dielectric charging phenomenon - a key failure mechanism for electrostatically actuated MEMS. Conduction mechanisms and trap properties of silicon nitride are investigated by current-voltage measurements on Metal-Insulator-Metal (MIM) capacitors and RF MEMS capacitive switches. Both structures show a similar behavior with two bulk-controlled conduction mechanisms: space-charge-limited...
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