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A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/V ?? s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds...
The fluctuation of RF performance (particularly for fT: cutoff frequency) in the transistors fabricated by 90-nm CMOS technology has been investigated. The modeling for fT fluctuation is well fitted with the measurement data within approximately 1% error. Low-Vt transistors (fabricated by lower doping concentration in the channel) show higher fT fluctuation than normal transistors. Such a higher f...
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