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In this paper, a 10 W peak power 2 GHz highly efficient RF pulse width modulation (RF-PWM) based transmitter is presented. RF-PWM signals are generated with a dedicated 65 nm CMOS modulator and subsequently amplified with a GaN Class-E power amplifier (PA). The modulator use extended drain MOS (EDMOS) high voltage transistors to provide the required voltage swing to drive the GaN used as a switch...
GaN based RF transistors has been drawing interest of many researchers over the recent years due to their advantages e.g. high breakdown voltage, high efficiency, high power density and large bandwidth. They are expected to replace Lateral-Diffused Metal - Oxide Semiconductor field effect transistors (LDMOS FET) that are presently popular power device for wireless and mobile communications but have...
This paper presents recent advances in power amplification devices and circuits with application to wireless communication infrastructure. A comparative analysis of the two leading technologies (LDMOS and GaN) is first presented. It is shown that GaN technology enables the use of power amplifiers circuits that requires harmonic loading at frequencies higher than 2 GHz. Then, power amplifiers classes...
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