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GaN based RF transistors has been drawing interest of many researchers over the recent years due to their advantages e.g. high breakdown voltage, high efficiency, high power density and large bandwidth. They are expected to replace Lateral-Diffused Metal - Oxide Semiconductor field effect transistors (LDMOS FET) that are presently popular power device for wireless and mobile communications but have...
The silicon vertical MOSFET RF power amplifier described in this document is one of the industry's first to utilize high voltage vertical technology. The power amplifier produces more than 25 W of peak pulsed power in the L-Band from 1200 MHz to 1400 MHz for ground based radar applications. Exhibiting nearly 20dB of gain, 50% efficiency at 48 volt operation with a 200 musec pulse width and 10% duty...
The silicon vertical MOSFET RF power amplifier described in this paper is the industry's first to utilize high voltage vertical technology. Operating under pulse conditions of 200 musec pulse width and 10% duty cycle it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P 1 dB compression...
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