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In this paper, a 10 W peak power 2 GHz highly efficient RF pulse width modulation (RF-PWM) based transmitter is presented. RF-PWM signals are generated with a dedicated 65 nm CMOS modulator and subsequently amplified with a GaN Class-E power amplifier (PA). The modulator use extended drain MOS (EDMOS) high voltage transistors to provide the required voltage swing to drive the GaN used as a switch...
A 23 dBm class E power amplifier (PA) has been designed and simulated at 3.7 GHZ using a 130 nm CMOS-SOI technology. The PA is a single stage, single ended cascode formed by a thin oxide transistor as common source device and a laterally diffused MOS (LDMOS) transistor as common gate. Fully integrated high current inductor is used as part of the class E wave shaping network. At 3.7 GHz, the PA achieves...
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