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In this paper, we propose a new hetero-material stepped gate (HSG) SOI LDMOS in which the gate is divided into three sections - an n+ gate sandwiched between two p+ gates and the gate oxide thickness increases from source to drain. This new device structure improves the inversion layer charge density in the channel, results in uniform electric field distribution in the drift region and reduces the...
A temperature-dependent RF large-signal model is constructed by modifying the Verilog-A code of the Angelov model for unique characteristics of GaN MOSHFETs. Different from the previously reported EEHEMT-based model, the present electro-thermal model can fit the temperature effects on threshold shift and transconductance degradation, the drain current in the linear region, and the gate capacitance...
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