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A fully on-chip SOI LDMOS linear PA for WLAN is implemented in a SOI LDMOS process. A cascode of SOI CMOS and SOI LDMOS is used to overcome the breakdown issue of the SOI CMOS transistor. An adaptive power cell (APC) and specially designed CG bias network are adopted to achieve linear performance. This proposed PA has gain of 24.3 dB and output power of 20.2 dBm for an 802.11n modulated signal with...
The balance operation between the efficiency and the linearity of RF power amplifier is the greatest challenging factor in wireless communication system. Amplifier is the most energy consuming element in a system, where more than 50% of the power produce is converted to heat energy as a waste. This situation gradually affects other devices in the transmitter system and can result to system performance...
A 5.2GHz double-balanced up-conversion mixer using 0.18μm CMOS technology is proposed in this paper. The current-enhanced and negative-resistance compensation techniques are employed to the transconductance stage to increase the conversion gain without sacrificing the linearity. Beside, current-enhanced topology also has the advantage of the current bleeding. Measured results of the proposed up-conversion...
In this paper, a medium power amplifier (MPA) designed using 0.5mum GaAs PHEMT technology targeted for a wireless LAN application is presented. The MPA is a two-stage single-ended design which employs a simple RC feedback amplifier. Feedback is an important concept in circuit design, where a signal or voltage derived from the output is superimposed on the input. This output-to-input path can be used...
This paper presents a SiGe BiCMOS transmitter for large bandwidth Polar Modulation and PWM signals. For flexibility, the transmitter presented in the paper has an externally controllable class of operation. Fabricated in a SiGe BiCMOS process (QUBIC4G), the measured saturated output power of the transmitter is 27 dBm and the measured PAE is 62%. It features an IMD3 of -30 dBc up to 25 dBm peak envelope...
This paper describes the circuit design and measurement of a single stage RF amplifier for 5.8 GHz-band with IEEE 802.11a standards for WLAN applications. The circuit was simulated using Ansoft Designer where a 14 dB of gain; input and output return loss less than -10 dB were observed. The GaAs hetrojunction FET (HFET), capacitors and resistors are combined with the microstrip line pattern by silver...
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