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Error correction in Flash memories is often based on BCH codes and algebraic decoding that employs the Berlekamp-Massey-Algorithm (BMA) for solving the key equation. Commonly, hardware implementations of the BMA perform many Galois field multiplications in parallel. This guarantees a large throughput. Alternatively, serial implementations were proposed that require less logic but result in a much...
NAND multi-level cell (MLC) flash memories are widely used due to low cost and high capacity. However the increased number of levels in MLC results in larger interference and errors. The errors in MLC flash memories tend to be asymmetric and with limited-magnitude. To take advantage of the characteristics, we propose limited-magnitude parity check codes, which can reduce errors more effectively. A...
In spite of the mature cell structure, the memory controller architecture of Multi-level cell (MLC) NAND Flash memories is evolving fast in an attempt to improve the uncorrected/miscorrected bit error rate (UBER) and to provide a more flexible usage model where the performance-reliability trade-off point can be adjusted at runtime. However, optimization techniques in the memory controller architecture...
This paper presents the systematic methodology of error correction scheme using low-density parity check (LDPC) codes to improve the reliability and endurance of multi-level cell (MLC) non-volatile memories. Using our realistic error model, the LDPC architecture with the scheme of non-uniform reference voltages (NURV) is proposed to trade off among error correction capability, area, and throughput,...
Error-correcting codes are normally employed in storage devices to guarantee the integrity of data in the presence of errors. This paper presents two schemes where error-correcting codes are used for entirely different purposes. In the first part of the paper, a new coding paradigm is proposed to improve the write performance of multi-level flash devices. By slightly relaxing the accuracy of cell...
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