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This paper presents an approach for the transient simulation of circuits through the latency insertion model using advanced models for MOS transistors. By taking into account the dynamic charge storage effects in short-channel devices a more accurate simulation of high-speed digital and analog circuits via the latency insertion method can be performed. The approach makes use of the SPICE LEVEL 3 transistor...
In this work a new contribution to the simulation of deep submicron, nanometer-scale MOFFET transistor characteristics is considered. Proposed approach is based on the use of traditional “compact” submicron MOS device models. Parameters of these models are verified by means of fitting procedure to results obtained by use exact physical models taking into account quantum effects accompanying charge...
This paper will focus on the simulation of a DC brush application in automotive surrounding. Commonly such drives are used in ABS (Antilock Braking System), HVAC (heating ventilation air conditioning) or wiper applications. An easy to use model of the DC brush motor will be introduced and combined with state of the art power MOSFET models. Some simulations with the complete setup will show the possibilities...
This paper presents a methodology for modeling the high-voltage silicon carbide (SiC) MOSFET/junction-barrier Schottky (JBS) diode power modules. The electrical model of an actual high-voltage SiC MOSFET/JBS module has been obtained using computer-aided electromagnetic analysis and verified through measurements. A circuit simulation model of a 2 kV, 5 A 4-H SiC MOSFET has also been built based on...
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