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In this paper, we propose a device model of silicon nano-scale wire transistor which includes the effects of elastic and inelastic scattering processes in carrier transport. Additionally, a possibility of silicon electrode for the wire transistor will be discussed.
We report studies on nanoscale Si-based memristive devices for memory and neuromorphic applications. The devices are based on ion motion inside an insulating a-Si matrix. Digital devices show excellent performance metrics including scalability, speed, ON/OFF ratio, endurance and retention. High density non-volatile memory arrays based on a crossbar structure have been fabricated and tested. Devices...
The recent discovery of the memristor has marked a new era for the advancement of neuromorphic applications and particularly the development of neurally-inspired processing architectures in silicon. An adults brain is a highly complex system and is estimated to contain from 1014 to 5??1014 synapses. On the other hand, the memristor is a delicate device requiring robust and reproducible fabrication...
Although a considerable amount of experimental and theoretical work has been devoted to nanoelectronic systems with molecular components, relatively little work has been done on molecular electronic devices on technologically relevant substrates such as silicon. Metal-molecule-semiconductor (MMS) studies have generally focused on structures in which the semiconductor barrier is dominant or treated...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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