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In this paper, the impacts of diameter-dependent annealing (DDA) effect on nanowire S/D extension random dopant fluctuations (SDE-RDF) in silicon nanowire MOSFETs (SNWTs) are investigated, in terms of electrostatic properties, source/drain series resistance (RSD), and driving current. The SDE-RDF induced variations of threshold voltage (Vth) and DIBL in SNWTs with different diameters are found to...
We demonstrate excimer laser annealed dopant segregated Schottky (ELA-DSS) junction on gate-all-around (GAA) silicon nanowire pFETs. The metal-semiconductor junction interfacial doping is increased by two-fold with the ELA method. On silicon nanowire, the method achieves an effective Schottky barrier height (SBH) of nearly zero, improves the short channel performance and reduces the parasitic resistance...
Electroluminescence devices based on nanocrystalline Si/SiO2 multilayers were fabricated and the luminescence can be observed both from vertical and lateral direction. Moreover, P-doped nanocrystalline Si/SiO2 multilayers were prepared and the improved electro-luminescence characteristics were achieved.
We report the fabrication and characterization of double-gated Si nanowire field effect transistors with excellent current-voltage characteristics, low subthreshold slope ~85 mV/dec and high on/off current ratio ~106. The Si nanowire devices are fabricated by using a self-aligned technique with standard photolithographic alignment and metal lift-off processes, enabling the large-scale integration...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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