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The thermal degradation and light capture performance of CuInGaSe2 (CIGS) and c-Si photovoltaic devices were explored. Typically thin-film polycrystalline materials such as CIGS are hypothesized to be advantaged over single crystal Si solar cells as having lower thermal performance and improved light capture response. To this end, we present our evaluation of the thermal and light capture performance...
Due to their extremely high electron mobility (mu), III-V materials are being investigated as channel materials for high performance NMOS. Although their small transport mass leads to high injection velocity (vinj), they have a low density of states (DOS) in the Gamma-valley, tending to reduce the inversion charge (Qinv) and hence reduce drive current. Furthermore, the direct band gaps of III-V materials...
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