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We report on the piezoresistive characterization of various silicon materials, including low-doped (n = 1016 cm-3) crystalline (c-Si), polycrystalline (poly-Si), and nanocrystalline (nc-Si) specimens. The employed wafer-scale microtensile technique enables the acquisition of linear and nonlinear piezoresistance coefficients. In contrast to previous studies where nonlinear coefficients were obtained...
MEMS (Micro Electro-Mechanical System) is a technology that offers significant advantages over various microscopic elecromechanical devices. In the field of MEMS products, pressure sensor represents a considerably mature technology and has been extensively used in a variety of applications. Nevertheless, packaging is a key issue among the processes of MEMS manufacture due to the specialty and complexity...
In this paper, a novel compact structure design for minimizing the chip area cost is proposed. The improvement in sensitivity and temperature drift for silicon piezoresistive force sensor is evaluated. The sensitivity improvement can be obtained by adding a long flexible cantilever, and locating stress-sensitive element at a high stressed area close to the bottom surface of the lower cantilever. An...
Strained Si is implemented into the standard CMOS process to enhance carrier transport properties since the 90 nm technology node. However, due to the non-uniform stress distribution in the channel, the enhancement of carrier mobility and threshold voltage strongly depend on layout parameters, such as channel length (L) and source/drain diffusion length (Lsd). In this work, a compact model that physically...
The polymer adhesive bonding technology using wafer-level technology was investigated to adhere silicon to glass wafer and it analyzed warpage caused in cemented wafer and the degree of intensity. We executed the wafer adhesion depending on temperature (130degC, 190degC), the pressure (5000 N, 8000 N), the height of the adhesive layer (10 mum, 20 mum) and the adhesive time (process time, the time...
We describe multiple embedded polysilicon resistive sensors in CMOS-MEMS electrothermal probes as a step toward creating probe arrays for passing current on ICs to reconfigure resistance change (RC) vias. When not in contact, a low-resistivity unsilicided polysilicon (LP) resistor detects probe displacement indirectly through the temperature coefficient of resistance (TCR) effect. When in contact...
Stress sensing test chips are widely utilized to investigate integrated circuit die stresses arising from assembly and packaging operations. In order to utilize these test chips to measure stresses over a wide range of temperatures, one must have values of six piezoresistive coefficients for n- and p-type silicon over the temperature range of interest. However, the literature provides limited data...
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