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In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å̊. The layers show maximum operating voltages in excess of 1 V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current...
In this paper, a novel compact structure design for minimizing the chip area cost is proposed. The improvement in sensitivity and temperature drift for silicon piezoresistive force sensor is evaluated. The sensitivity improvement can be obtained by adding a long flexible cantilever, and locating stress-sensitive element at a high stressed area close to the bottom surface of the lower cantilever. An...
The arterial pulse monitoring is significant in assessment of cardiovascular system. To improve the performance of arterial pulse sensor, a new non-invasive arterial pulse detecting system composed of a nc-Si:H/c-Si heterojunction MOSFET pressure sensor fabricated by micro-electromechanical systems (MEMS) technology and detecting circuits has been developed. The arterial pulse detecting system can...
Strained Si is implemented into the standard CMOS process to enhance carrier transport properties since the 90 nm technology node. However, due to the non-uniform stress distribution in the channel, the enhancement of carrier mobility and threshold voltage strongly depend on layout parameters, such as channel length (L) and source/drain diffusion length (Lsd). In this work, a compact model that physically...
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