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This paper shows for the first time integrated thin film ferroelectric metal-insulator-metal capacitors on silicon with a record high capacitance density above 100 nF/mm2 combined with a breakdown voltage of 90 V and a lifetime exceeding 10 years at 85degC and 5 V. The high capacitance density was obtained by a combination of material optimizations resulting in a dielectric constant of 1600, and stacking...
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