The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper we discuss the classification of localized intrinsic/impurity defect states in the band gap of semiconductors according to the charging and transition energy levels of the state being single or multiple, and according to the atomic configuration and formation of energy of the state being single or multiple. For semiconductors that have multi-level intrinsic/impurity defect states (such...
We have studied magnetron sputtered CdS/CdTe cells having CdTe or CdS intentionally doped with either Si, P or Cu. This study was done to understand the effects of doping on the transient behavior and J-V performance of CdTe cells. Different chemical group elements were selected to see their comparative effects on cell response. In comparison with undoped CdTe, the cells with Si or P doping show enhanced...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.