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This report studies the influence of printed circuit board (PCB) design on voltage overshoot and ringing oscillation in switching operation of gallium nitride gate injection transistor (GaN-GIT) for high-frequency DC-DC converter. The parasitic inductances in the main power loop have been identified based on moment of method (MoM) analysis and frequency characteristics of impedance measured with 2-port...
A three-phase ac-ac matrix converter for inductive power transfer (IPT) systems with soft-switching operation and bidirectional power flow is introduced. The proposed converter can generate high-frequency current directly from a three-phase ac power source without a dc link. Unlike conventional ac-dc-ac converters, the proposed converter can provide a high frequency current without any current sag...
Multilevel Cascaded H-Bridge (CHB) converters have attractive features for the implementation of large scale photovoltaic systems. They can be directly connected to high voltages and the multilevel voltage synthesis reduces the harmonic distortion introduced. In addition, they have individual DC links ideal for connecting photovoltaic arrays. Existing high performance voltage balancing techniques...
This paper presents an innovative switched capacitor voltage regulator dedicated to ultra-low power wireless sensor nodes. The regulator supports most of the different power supplies used to power such sensor nodes. Using a linear regulator in parallel improves the dynamic response compared to state-of-the-art switched capacitor regulators. Measuring the load current allows adapting the oscillator...
The next generation of wireless communication is a ubiquitous radio system concept, providing wireless access from short-range to wide-area, with one single reconfigurable and adaptive system for all envisaged radio environments. This paper presents the design approach of RCO (reconfigurable concurrent oscillator) that simultaneously generates two or more signals of different frequencies that eliminate...
A new high-speed transistor switching device was developed, using either a YBa2Cu3O7-x or a BiSrCaCuO high-temperature oxide superconducting bulk core at 77K. The device is capable of switching with a turn-on time (??on) of 0.2 s and a turn-off time (??off) of 0.2 s, when using a 1 A power transistor. These values are about 1/10 to 1/100 times shorter than the values of a transistor switching device...
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