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To furnish semiconductor surfaces at device fabrication, control of micro-structures is expected of the most importance in the near-future. Highly sensitive measurement of desorption from Cl-adsorbed Si(111) surface indicated that a diffusive process plays an important role on the surface. The desorption barrier was estimated to be 2.2 eV from temperature-dependence of time-course in isothermal desorption,...
New experimental temperature programmed desorption (TPD) data have been obtained under carefully controlled UHV conditions following the adsorption of bromine and the co-adsorption of bromine and atomic deuterium on the single crystal Si(100):2 1 surface. Coverages ranged from maxima of θ = 1.5 ML (atomic deuterium alone) and 1.0 ML (atomic bromine alone) and included a wide combination of the...
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