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The effect of annealing at up to 1550 K under argon pressure up to 1.5 GPa (high temperature-high pressure (HT-HP) treatment) on silicon implanted with helium, hydrogen or oxygen (Si:He, Si:H or Si:O) was investigated by X-ray, secondary ions mass spectrometry (SIMS), transmission electron microscopy (TEM), photoluminescence (PL), and electrical methods. The HT-HP treatment of Si:He results in decrease...
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