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Thin amorphous AgSbS 2 films were deposited as the potential candidate for new phase-change memory material. Thin films were prepared by pulsed laser deposition (PLD) from AgSbS 2 polycrystalline bulk samples. Bulk samples were prepared by melt-quench technique from pure elements. Composition and chemical homogeneity of these bulks were checked by scanning electron microscopy with...
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