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This paper deals with experimental studies of H - ion desorption from silicon crystal surfaces Si(111):H(1x1) with various impurity levels and nature. Following previous studies carried out on a ''high resistivity'' n (~10 Ωcm) substrate, new investigations show the absence of isotopic effect for hydrogen ion desorption. In addition for 0.23 Ωcm n-type and 0.05 Ωcm p-type silicon (111) crystals...
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