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The thermal oxidation of Si(001) surface under 1000 K in the O 2 pressure of 1x10 -4 Pa has been in situ investigated using real-time photoemission spectroscopy with high energy-resolution synchrotron radiation. Using a reaction kinetics model, we found that the oxidation at 1000 K progressed with a two dimensional island growth mechanism involving desorption of SiO molecules...
We have found that the degeneracy pressure of electrons (DPE) inside Pb islands grown on a silicon substrate plays a crucial role in stabilizing the islands. In most cases, at a metal-semiconductor interface charge spilling takes place due to the difference of Fermi energies between the two materials, which makes DPE decrease along with the energy of the system. Based on this new effect, calculations...
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